• Capacities  8GB kits
  • Speeds up to 2400MHz
  • 1.5V & 1.65 V operating voltages enable stable overclocking
  • Intel XMP Ready; optimized performance settings handpicked and tested by Kingston engineers
  • Dual Channel kit tailored for P55, H67, P67, Z68, H61 (AG), and Z77 Intel chipsets; as well as A75, A87, A88, A89, A78, and E35 (Fusion) AMD chipsets
  • Exceptional clock and latency timing specifications to enhance overall system performance
  • Heat sink design achieves effective maintenance of speed while prolonging the memory lifecycle
  • 100% factory tested
  • JEDEC standard 1.5V (1.425V ~ 1.575V) Power Supply
  • VDDQ = 1.5V (1.425V ~ 1.575V)
  • 667MHz fCK for 1333Mb/sec/pin
  • 8 independent internal bank
  • Programmable CAS Latency: 9, 8, 7, 6
  • Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
  • Programmable CAS Write Latency(CWL) = 7 (DDR3-1333)
  • 8-bit pre-fetch
  • Burst Length: 8 (Interleave without any limit, sequential with
  • starting address “000” only), 4 with tCCD = 4 which does not
  • allow seamless read or write [either on the fly using A12 or MRS]
  • Bi-directional Differential Data Strobe Internal(self) calibration : Internal self calibration through ZQ pin (RZQ : 240 ohm ± 1%)
    • On Die Termination using ODT pin
    • Average Refresh Period 7.8us at lower than TCASE 85°C,
    • 3.9us at 85°C < TCASE < 95°C
    • Asynchronous Reset
    • PCB : Height 2.122” (53.90mm) w/ heatsink, double sided Component


Kingston's KHX24C11T2K2/8X is a kit of two 512M x 64-bit

(4GB) DDR3-2400 CL11 SDRAM (Synchronous DRAM), 2Rx8

memory modules, based on sixteen 256M x 8-bit FBGA

components per module. Each module kit supports Intel® XMP

(Extreme Memory Profiles). Total kit capacity is 8GB. Each

module kit has been tested to run at DDR3-2400 at a low

latency timing of 11-13-13 at 1.65V. The SPDs are programmed

to JEDEC standard latency DDR3-1333 timing of

9-9-9 at 1.5V. Each 240-pin DIMM uses gold contact fingers.

The JEDEC standard electrical and mechanical specifications

are as follows:


  • CL(IDD) 9 cycles
  • Row Cycle Time (tRCmin) 49.5ns (min.)
  • Refresh to Active/Refresh 160ns (min.)
  • Command Time (tRFCmin)
  • Row Active Time (tRASmin) 36ns (min.)
  • Maximum Operating Power 2.400 W* (per module)
  • UL Rating 94 V - 0
  • Operating Temperature 0o C to 85o C
  • Storage Temperature -55o C to +100o C
  • *Power will vary depending on the SDRAM used.


  • JEDEC: DDR3-1333 CL9-9-9 @1.5V
  • XMP Profile #1: D3-2400 CL11-13-13 @1.65V
  • XMP Profile #2: D3-2133 CL11-12-11 @1.60V


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